电子回旋共振等离子体增强化学气相沉积a-CF_x薄膜的化学键结构  

CHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION

作　　者：宁兆元[1] 程珊华[1] 叶超[1] 

机构地区：[1]苏州大学物理系,苏州215006

出　　处：《物理学报》2001年第3期566-571,共6页Acta Physica Sinica

基　　金：江苏省自然科学基金!(批准号 :L310 870 3)资助的课题

摘　　要：使用CHF3 和C6H6混合气体做气源 ,在一个电子回旋共振等离子体增强化学气相沉积装置中制备了氟化非晶碳 (a CFx)薄膜 .利用发射光谱研究了等离子体中形成的各种碳 氟、碳 氢基团随放电宏观参量的变化规律 ,对薄膜做了傅里叶变换红外光谱和X射线光电子能谱分析 ,证实等离子体中的CF2 ,CF和CH基团是控制薄膜生长、碳The a-C:F-x films with low dielectric constant has been studied,considering that they can be used for interlayer dielectric in ultra-large integrated circuits. These films were deposited by using electron cyclotron resonance plasma reactor with CHF3 and C6H6 mixture as source gas. The effects of microwave power,pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated. The fluorocarbon and hydrocarbon radical species in the plasma discharges were monitored by the optical emission spectra. The structural properties of the films were characterized by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. A relationship between the radical species in the discharge plasma and Lending structure of the films is analysed. It demonstrates that CF2,CF and CH radicals play the important roles in the forming of films.

关 键 词：氟化非晶碳薄膜 电子回旋共振等离子体 沉积速率 化学键结构 

分 类 号：O484[理学—固体物理]