利用金属/绝缘体/半导体(MIS)结构研究IPN的介电常数  

Study of Dielectric Characteristics of Interpenetrating Polymer Networks (IPN) by Using MIS Structure

作　　者：刘萍[1] 刘菊英[1] 张大博[1] 

机构地区：[1]哈尔滨标准情报研究所,黑龙江哈尔滨150006

出　　处：《应用科技》2001年第5期33-35,共3页Applied Science and Technology

摘　　要：采用自制的制膜工具在n型硅片上制备了互穿聚合物网络 (IPN)绝缘层膜。用真空镀在IPN膜上蒸镀铝圆顶电极形成了Al/IPN/nSi(MIS)结构。在室温条件下测定了电容—电压 (C—V)特性。根据测定的C—V特性曲线计算了IPN膜的介电常数。Polyurethane/Polybutyl_methacrylate (PU/PBMA) Inter_penetrating Polymer Networks (IPN) film was formed on n_Si substrate by dropping technique.When aluminium was vacuum_deposited on the top of the film the Al/IPN /n_Si(MIS) structure was fabricated.The dielectric constant of IPN was obtained by using high frequency Capacitance_Voltage ( C—V ) characteristics.

关 键 词：MIS结构 IPN 电容-电压特性 介电常数 互穿聚合物网络 绝缘层膜 硅片 

分 类 号：TM215.3[一般工业技术—材料科学与工程] D631.23[电气工程—电工理论与新技术]