集成门极换向型晶闸管透明阳极的数值模拟  

Numerical Simulation of Integrated Gated Commutated Thyristor Transparent Anode

作　　者：姚振华[1] 朱长纯[1] 刘伟[1] 吴春瑜[1] 杨大江[1] 白继彬[2] 张昌利[2] 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049 [2]西安电力电子技术研究所

出　　处：《西安交通大学学报》2001年第8期808-810,815,共4页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金资助项目 (6 9876 0 13;6 0 0 36 0 16 ) ;教育部博士学科点专项科研基金资助项目 (980 6 982 8)

摘　　要：分析了集成门极换向型晶闸管 (IGCT)的透明阳极相对于传统阳极的特点 ,并进行了数值模拟 .利用有限差分法求解电子电流密度方程、空穴电流密度方程、载流子连续性方程和泊松方程的联立方程组 ,得到了透明阳极的发射效率随电子电流密度增大而增大的变化关系 .透明阳极的这种特点使得IGCT在大电流关断时能够迅速地排出过剩的载流子 ,保证了关断时的均匀性 ,简化甚至消除了吸收电路 ,使得IGCT在中电压、大功率场合具有广泛的用途 .Characteristics of the transparent anode for the integrated gated commutated thyristor (IGCT) is analyzed and numerically simulated. The finite differential method is used to solve the simultaneous equations that consist of electron current density equation, cavity current density equation, carrier continuity equation and Poisson equation. The results show that the emission efficiency of transparent anode increases with the electron current density. The excess carriers can be quickly filtered out when IGCT turned off at large current. These characteristics ensure the uniformity of the turn-off process and implementation of the snubberless design. IGCT can be widely used for middle voltage range of large power applications.

关 键 词：集成门极换向型晶闸管 透明阳极 功率半导体 数值模拟 IGCT 

分 类 号：TN342[电子电信—物理电子学]