Quasi-Thermodynamic Model of MOVPE Growth of Ga_xAl_yIn_(1-x-y) N  

生长Ga_xAl_yIn_(1-x-y)N的准热力学模型(英文)

作　　者：陆大成[1] 段树坤[2] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室,北京100083 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2001年第6期677-683,共7页半导体学报（英文版）

基　　金：国家重点基础 (973 )资助项目! (合同号 :G2 0 0 0 0 683 )&&

摘　　要：WT9.BZ]A quasi-thermodynamic model of MOVPE growth of Ga xAl yIn 1-x-y N alloys has been proposed with TMGa,TMAl,TMIn and ammonia as sources.In this model,the effect of decomposition of ammonia has been con- sidered and the number of moles is used to express the mass conservation constraints of element N,H,Ga,Al and In.It is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ elements.The influence of growth conditions on the relationship between Ga xAl yIn 1-x-y N lattice matched to GaN and input group Ⅲ metalorganic compounds has been calculated.Almost all the aluminum and gallium reaching the growing surface are incorporated in the alloy.In order to enhance the incorporation of indium into Ga xAl yIn 1-x-y N,lower growth temperature and higher input Ⅴ/Ⅲ ratio should be used and the decomposed fraction of ammonia should be reduced.提出一个以 TMGa、TMAl、TMIn和 NH3为源 ,用 MOVPE方法生长 Gax Aly In1 - x- y N四元合金的准热力学模型 .该模型假设四元合金是由氨和 族元素之间反应合成的 ,其特点是考虑了 NH3的分解效率 ,并用 N、H、Ga、 Al及 In的摩尔分数代替惯用的分压来表示质量守衡方程 .计算了各种生长条件对于与 Ga N晶格匹配的Gax Aly In1 - x - y N四元合金与注入反应室的 族金属有机化合物之间关系的影响 .计算表明 ,几乎所有达到生长表面的 Al和 Ga都并入到 Gax Aly In1 - x - y N四元合金中 ,而 In则富集在气相 .为增强铟的并入 ,应采用低的生长温度 ,高的 / 比 ,氮载气而且须要设法降低到达生长界面前氨的分解 .

关 键 词：GaAlInN MOVPE THERMODYNAMIC group Ⅲ nitrides 

分 类 号：TN304.055[电子电信—物理电子学]