Effects of Interdiffusion on Luminescence of InAs/GaAs Quantum Dots Covered by InGaAs Overgrowth Layer   

快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文)

作　　者：魏永强[1] 刘会云[1] 徐波 丁鼎[1] 梁基本[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室,北京100083

出　　处：《Journal of Semiconductors》2001年第6期684-688,共5页半导体学报（英文版）

基　　金：国家自然科学基金;国家先进材料委员会资助项目&&

摘　　要：WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.系统地研究了快速热退火对带有 3nm Inx Ga1 - x As(x=0 ,0 .1,0 .2 )盖层的 3nm高的 In As/ Ga As量子点发光特性的影响 .随着退火温度从 6 5 0℃上升到 85 0℃ ,量子点发光峰位的蓝移趋势是相似的 .但是 ,量子点发光峰的半高宽随退火温度的变化趋势明显依赖于 In Ga As盖层的组分 .实验结果表明 In- Ga在界面的横向扩散在量子点退火过程中起了重要的作用 .另外 ,我们在较高的退火温度下观测到了 In Ga

关 键 词：rapid thermal annealing InAs quantum dots InGaAs overgrowth layer 

分 类 号：TN304[电子电信—物理电子学]