新型功率MOS器件的结构与性能特点  

The structural and performance features of power MOS devices with new structures

作　　者：华伟[1] 

机构地区：[1]北方交通大学,北京100044

出　　处：《半导体技术》2001年第7期27-30,36,共5页Semiconductor Technology

摘　　要：电力电子器件的结构决定其性能，而器件的性能又决定电路的性能。根据此原理，分析比较了近十年来１０种实用的具有新结构的功率ＭＯＳ器件的结构与性能特点。The performance of power electronic devices depends on their structure, and the performance of power electronic circuits depends on the performance of power electronic devices. On the basis of the principle, the structural and performance features of ten practical power MOS devices with new structure which developed in recent ten years are analyzed and compared.

关 键 词：电力电子器件 绝缘栅双极晶体管 功率MOSFET 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]