低温制备Pb(Zr_(0.52)Ti_(0.48))O_3铁电薄膜及其性能研究  

Studies on fabrication and properties of PZT thin films by PLD at low temperature

作　　者：王华[1] 于军[1] 王耘波[1] 周文利[1] 谢基凡[1] 朱丽丽[1] 

机构地区：[1]华中理工大学电子科学与技术系

出　　处：《功能材料》2001年第3期250-251,253,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(69771024)

摘　　要：采用脉冲激光沉积技术（ＰＬＤ）在（１００）ｐ－Ｓｉ衬底上，低温淀积、快速退火成功地制备了具有完全钙钛矿结构的多晶ＰＺＴ铁电薄膜。所制备的ＰＺＴ铁电薄膜致密、均匀，表现出良好的介电和铁电性能．其介电常数和介电损耗１００ｋＨＺ下分别为３２０和０．０８，剩余极化Ｐｔ和矫顽场Ｅｃ分别为１４μＣ／ｃｍ２和５８ｋＶ／ｃｍ．＋５Ｖ电压下漏电流密度低于 １０－７Ａ／ｃｍ２。１０７次极化反转后剩余极化仅下降１０％，具有较好的疲劳特性。Polycrystalline Pb(Zr0.52Ti0.48)O3 thin films having single perovskite phase were successfully produced on (100) p-type silicon substrate by pulsed laser deposition (PLD) technique. Homogeneous and compact films of 400nm thickness were deposition at ℃ and post-deposition rapid thermal annealing treatment at 530℃ for 10min. The films exhibited good structural, dielectric and ferroelectric properties. The measured dielectric constant and loss factor at a frequency of 100kHz were 320 and 0. 08. The remanent polarization and the coercive field were 14uC/cm2 and 58kV/cm respectively. The films showed low leak current density of 8 ×10-8 A/cm2 at +5V voltage and good switching endurance under bipolar stressing at least up to 107 cycles.

关 键 词：PZT 铁电薄膜 PLD 制备工艺 性能 

分 类 号：TM22[一般工业技术—材料科学与工程] TQ174.754[电气工程—电工理论与新技术]