Sol-Gel法硅基PZT铁电薄膜研究  

Study of silicon-based ferroelectric PZT thin films fabricated by sol-gel method

作　　者：张林涛[1] 任天令[1] 张武全[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《功能材料》2001年第3期252-253,共2页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(69806007)

摘　　要：介绍了以硝酸锆、醋酸铅和钛酸四丁酯为原料用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法在硅衬底上制备Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３（ＰＺＴ）铁电薄膜的工艺流程。对铁电薄膜的表面形貌、晶化程度、界面状态等性质进行了分析，结果表明硅基ＰＺＴ薄膜形成了良好的钙钛矿结构。并在此基础上实现了制备ＰＺＴ铁电薄膜的低温改进工艺。Ferroelectric Pb(Zr0.53Ti0.47)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si and silicon substrates by sol-gel method u-sing Zr(NO3)4·5H2O,Pb(CH3COO)2·3H2O and Ti(OC4H9)4 as raw materials. Surface, crystallization and interface of these films were studied. Experimental results showed that the thin films were well crystallized. An improved low-temperature fabrication process was realized based on our studies.

关 键 词：SOL-GEL法 PZT 铁电薄膜 

分 类 号：TM22[一般工业技术—材料科学与工程]