多孔硅上生长Ge量子点的光学特性  

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

作　　者：王亚东[1] 黄靖云[1] 叶志镇[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室

出　　处：《Journal of Semiconductors》2001年第9期1116-1118,共3页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :6 96 86 0 0 2 )~~

摘　　要：采用量子尺寸的多孔硅作为衬底 ,利用区域优先成核在多孔硅表面上成功地生长了 Ge量子点 .由于量子限制效应锗的 PL 谱发生了明显的蓝移 ,计算表明在傅里叶红外光谱中观察到的中红外 (5— 6 μm)吸收峰是源于量子点中的亚能带跃迁 (两个重空穴能级之间的跃迁 ) ,这为The Ge quantum dots on anodized porous silicon layers are prepared by using area preferential nucleation at 700℃.PL reveals a large blue shift in energy due to the effect of the quantum size.Intersubband absorption in the valence band is observed around 215meV(5-6μm wavelength) using Fourier transform infrared spectroscopy.The absorption is attributed to the transitions between the first two heavy hole states of the Ge quantum dots.This study opens the potential route to the realization of Ge quantum dot infrared photodetectors.

关 键 词：锗量子点 红外光探测器 光学特性 多孔硅 

分 类 号：TN215[电子电信—物理电子学]