77K下工作的双层多晶硅发射区RCA器件和电路  

Double-Polysilicon Emitter RCA Devices and ICs at 77K

作　　者：叶红飞[1] 高玉芝[1] 金海岩[1] 罗葵 宁宝俊 莫邦燹[1] 张广勤 张利春[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《Journal of Semiconductors》2001年第9期1207-1211,共5页半导体学报（英文版）

摘　　要：研究了掺磷双层多晶硅 RCA器件和电路的制备工艺及其温度特性 .在工艺中采用自对准双极结构 ,生长一层 RCA超薄氧化层 ,并用快速热退火处理 RCA氧化层 .研制的多晶硅发射区 RCA晶体管不仅具有较低的电流增益 -温度依赖关系 ,而且还具有较快的工作速度 .首次制备出多晶硅发射区 RCA ECL静态二分频器在室温下其工作频率为 1.1— 1.2 GHz,在液氮温度下能够正常工作 ,工作频率可达 730 MHz.The processing technologies and temperature characteristics of phosphorus-doped polysilicon emitter RCA devices and ICs are investigated.By adopting a self-aligned bipolar structure an ultra-thin interfacial oxide is grown deliberately by using RCA oxidation,which is treated by Rapid Thermal Annealing (RTA) in nitrogen atmosphere then.Double-polysilicon RCA transistors,with both less temperature dependence on current gain and higher cut-off frequency,are fabricated.Furthermore,the running frequency for the ECL static frequency divider constructed by double-polysilicon RCA transistors is 1 1-1 2GHz at room temperature,while it is 730MHz at the liquid nitrogen temperature.

关 键 词：RCA晶体管 ECL集成电路 双层多晶硅 发射区 

分 类 号：TN32[电子电信—物理电子学]