InP材料直接键合技术  

Characteristics of Direct Wafer Bonded InP Materials

作　　者：李宁[1] 韩彦军[1] 郝智彪[1] 孙长征[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系

出　　处：《Journal of Semiconductors》2001年第9期1217-1221,共5页半导体学报（英文版）

基　　金：国家自然科学基金 ( 96 5 2 5 40 7;6 9896 2 6 0 -1) ;国家"八六三"高技术计划项目 ( 86 3-30 7-0 4-0 6 ;86 3-30 7-11-3( 0 2 ) );"九七三"国家重点基础研究发展规划 ( G2 0 0 0 -0 3-6 6 0 1)资助项目~~

摘　　要：研究了 In P/In P的直接键合技术 ,给出了详细的 In P/In P键合样品的电特性随健合工艺条件变化的数据 ,在低于 6 5 0℃的键合温度下实现了 In P/In P大面积的均匀直接键合 ,获得了与单晶 In P衬底相同的电特性和机械强度 .在器件的键合实验中也获得了成功 ,在 In Ga As P/In P多量子阱激光器结构的外延面上键合 p- In P衬底后制作的激光器激射特性良好 .The direct wafer bonding technology of InP materials is presented systematically for the first time.The relationship between the I-V characteristics of the InP/InP bonding interface and the experimental conditions is thoroughly investigated.Large-area uniform InP/InP wafer bonding interface is obtained at the heating temperature below 650℃.The I-V characteristics and the mechanical strength of the bonding interface are same as those of InP single crystal substrate,respectively.An InP/InGaAsP MQW laser is directly bonded with the p-InP substrate successfully,with higher efficiency and a little bit higher threshold than that without bonded p-InP substrate.

关 键 词：直接键合 半导体激光器 磷化铟 半导体材料 

分 类 号：TN304.23[电子电信—物理电子学]