Channel Hot-Carrier-Induced Breakdown of PDSOI NMOSFET's  

沟道热载流子导致的 PDSOI NMOSFET's击穿特性(英文)

作　　者：刘红侠[1] 郝跃[1] 朱建纲[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《Journal of Semiconductors》2001年第8期1038-1043,共6页半导体学报（英文版）

基　　金：中国国家先进研究基金资助项目 (批准号 :982 5 741)

摘　　要：The hot-carrier-induced oxide breakdown i s systematically clarified for partially depleted SOI NMOSFET's fabricated on SI MOX wafer.The gate oxide properties are considered to analyze the channel hot-c arrier effects.Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.Based on these results,the influence of channel hot carriers on SOI NMOSFET's front-chan nel properties is investigated.A power time dependence extrapolation technique i s proposed to predict the device's lifetime.Experimental results show that the N MOSFET's degradation is caused by the hot-holes,which are injected into the gat e oxide from the drain and then trapped near the drain side.However,the electron s trapped in the gate oxide can accelerate the gate breakdown.The two simultaneo us breakages of Si-O bonds at a Si atom lead to the irreversible relaxation of the oxide network.A novel physical mechanism of channel hot-carrier-induced ga te oxide breakdown is also presented.对热载流子导致的 SIMOX衬底上的部分耗尽 SOI NMOSFET's的栅氧化层击穿进行了系统研究 .对三种典型的热载流子应力条件造成的器件退化进行实验 .根据实验结果 ,研究了沟道热载流子对于 SOI NMOSFET's前沟特性的影响 .提出了预见器件寿命的幂函数关系 ,该关系式可以进行外推 .实验结果表明 ,NMOSFET's的退化是由热空穴从漏端注入氧化层 ,且在靠近漏端被俘获造成的 ,尽管电子的俘获可以加速 NMOSFET's的击穿 .一个 Si原子附近的两个 Si— O键同时断裂 ,导致栅氧化层的破坏性击穿 .

关 键 词：Hot-Carrier Effects (HCE) device lifetime SOI  NMOSFET's SIMOX 

分 类 号：TN386[电子电信—物理电子学]