屏蔽对GaAs/Al_xGa_(1-x)As异质结系统中施主结合能的影响  

Screening Influence on the Binding Energy of a Donor in a GaAs/Al_xGa_(1-x)As Heterojunction System

作　　者：曹轶乐[1] 班士良[1] 

机构地区：[1]内蒙古大学理工学院物理系,内蒙古呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2001年第4期392-396,共5页Journal of Inner Mongolia University：Natural Science Edition

摘　　要：对半导体单异质结系统 ,引入三角势近似异质结势 ,考虑电子对杂质库仑势的屏蔽影响 ,利用变分法讨论在界面附近束缚于正施主杂质的单电子基态能量 .对 Ga As/Alx Ga1-x As系统的杂质态结合能进行了数值计算 ,给出了结合能随杂质位置和电子面密度的变化关系 。A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential.The screening effect is considered with the random phase approximation. The impurity state binding energy is obtained numerically for the system. The relations between the binding energy and the impurity position, the electron areal density with and without screening effect are given respectively.

关 键 词：异质结 结合能 屏蔽影响 电子面密度 施主杂质 半导体 

分 类 号：O471.3[理学—半导体物理]