ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究  

EPITAXIAL GROWTH AND EXCITON OPTICAL PROPERTIES OF ZnCdSe/ZnSe QUANTUM WELLS

作　　者：张希清[1] 梅增霞[1] 段宁[1] Tang ZK 

机构地区：[1]北方交通大学光电子技术研究所,北京100044 [2]Department of Physics The Hong Kong University of Science and Technology

出　　处：《光子学报》2001年第2期152-155,共4页Acta Photonica Sinica

基　　金：国家自然科学基金! (批准号 6960 60 0 1 );中科院激发态物理开放实验室基金;高等学校骨干教师资助计划项目

摘　　要：用分子束外延在 Ga As衬底上生长了 Zn Cd Se/Zn Se多量子阱结构 .利用 X射线衍射 ( XRD)、变温度 PL光谱和 ps发光衰减等研究了 Zn Cd Se/Zn Se多量子阱结构和激子复合特性 .由变温 PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理 .Zn 0.7 Cd 0.3 Se/ZnSe quantum wells were grown by molecular beam epitaxy on substrate GaAs.The structure and exciton optical properties in high quality ZnCdSe/ZnSe MQWs are investigated by means of XRD spectra,the temperature dependence of the PL spectra and time resolved photoluminescence spectrum at 77K.The highest order of satellite peak of the sample is 5 from XRD spectrum.Excitonic luminescence decay time is 79.1ps.The linewidth of the exciton emission becomes broader with increasing temperature.The linewidth at low temperature is due to the alloy composition and well thickness fluctuations,and the broadening linewidth at high temperature is contributed by the interactions among the exciton and LO phonons and ionized donor impurities.The PL intensities are reduced with increasing temperature,which is mainly due to the thermal dissociation of excitons,i.e.,the electrons or holes jump into the barriers from the wells by thermal excitations.

关 键 词：激子 分子束外延 ZnCdSe/ZnSe多量子阱 自由激子发光 变温PL光谱 X射线衍射 XRD 

分 类 号：TN201[电子电信—物理电子学]