半导体量子器件物理讲座 第五讲 弹道输运器件和量子干涉器件  

BALLISTIC TRANSPORT DEVICES AND QUANTUM INTERFERENCE DEVICES

作　　者：李国华[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《物理》2001年第8期506-510,共5页Physics

摘　　要：当器件的尺度小到与电子的平均自由程相当时 ,电子的输运可以看作弹道输运 .文章介绍了隧穿热电子晶体管在输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器 .如果器件的尺寸进一步减小 ,电子的波动特性也必须考虑 .文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理 .Electrons travel ballistically when the device size is of the same order of magnitude as their mean free path. The principles underlying tunneling hot electron transistors operating both in the transfer amplifier mode and electron energy spectroscopy mode are described. Also presented is the resonant tunneling hot electron transistor operating as a memory device. The wave-like properties of electrons must be considered if the device size decreases further. The basic concepts for analyzing the electron transport in such devices and the principle of operation of quantum interference and quantum reflection transistors are described.

关 键 词：弹道输运 热电子晶体管 量子干涉器件 输运放大器 电子能谱仪 记忆器 电子运动 半导体量子器件 

分 类 号：O471.1[理学—半导体物理]