外吸除用硅片背面加工技术的研究  

Study on Processing Technique of Silicon Wafer Back Surface of for External Gettering

作　　者：闵靖[1] 邹子英[1] 李积和 周子美 陈青松 陈一[3] 

机构地区：[1]上海市计量测试技术研究院,上海200233 [2]上海硅材料厂,上海201617 [3]复旦大学材料研究院,上海200433

出　　处：《稀有金属》2001年第5期340-344,共5页Chinese Journal of Rare Metals

摘　　要：用SEM、TEM和光学显微镜研究了硅片背面的机械损伤 (包括软损伤 )和多晶硅的晶格结构 ,以及热处理过程中晶格结构和缺陷的演化 ,探索了吸杂的机理。实验结果表明 ,用本技术能减少S坑密度 ,提高硅片产生寿命 ,对金。The crystalline structure of polysilicon and the mechanical damage(including soft damage) on the back of Si wafers as well as induced defects during the thermal treatment of devices were investigated by means of SEM, TEM and optical microscope. A mechanism to explain the gettering was proposed. The effectiveness of reducing s pits density and raising generate lifetime of Si wafers as well as gettering heavy metals impurities such as Au,Cu was demonstrated.

关 键 词：机械损伤 软损伤 氧化诱生层错 S坑缺陷 外吸除 内吸除 硅片 

分 类 号：TN304.12[电子电信—物理电子学]