激光印痕研究中的硅平面薄膜和刻蚀膜  

The Thin Silicon Foil and Silicon Grating Foil-Used in Laser Imprint Research

作　　者：周斌[1] 王珏[1] 韩明 徐平[1] 沈军[1] 邓忠生[1] 吴广明[1] 张勤远[1] 陈玲燕[1] 王跃林 

机构地区：[1]同济大学波耳固体物理研究所,上海200092 [2]上海冶金研究所传感器国家重点联合实验室,上海200050

出　　处：《原子能科学技术》2001年第4期300-304,共5页Atomic Energy Science and Technology

基　　金：国家"8 6 3"惯性约束聚变领域资助课题 (86 3 416 3 6 6 )

摘　　要：研制了用于激光印痕研究的Si平面薄膜和刻蚀膜。膜制备的主要工艺采用氧化、扩散、光刻等现代半导体技术 ,并结合自截止腐蚀技术。Si平面膜厚度为 3～ 4 μm ,表面粗糙度为几十nm。采用离子束刻蚀工艺 ,在Si膜表面引入 2 5μm× 2 5μm的网格图形或线宽为 5μm的条状图形 ,获得了相应图形的Si刻蚀膜。探讨了扩散、氧化、腐蚀工艺对自支撑Si平面薄膜的表面粗糙度的影响 。The research of laser imprint is an important experiment in inertial confinement fusion(LCF). Thin silicon foil with a thickness of 3～4 μm and surface roughness about 10 nm is prepared by oxidation, diffusion, photoetching process and self-stop etching process. Combined with ion beam etching process, the silicon grating foil with chess board and strip pattern is prepared on the silicon foil. The parameters of diffusion, oxidation, etching process are studied to control the roughness of thin silicon foil. And the parameters of ion beam etching process are studied to control the pattern precision of silicon grating foil._

关 键 词：激光印痕靶 自截止腐蚀 离子束刻蚀 硅平面薄膜 刻蚀膜 惯性约束聚变 

分 类 号：TL632.1[核科学技术—核技术及应用]