高性能低阈值高温无致冷1.3μm AlGaInAs量子阱激光器  

High performance, low-threshold high-temperature uncooled 1.3 μm AlGaInAs/InP MQW laser diode

作　　者：郑鹏[1] 王任凡 岳爱文 李林 沈坤 

机构地区：[1]华中科技大学光电子工程系,湖北武汉430074 [2]武汉电信器件公司,湖北武汉430074

出　　处：《光通信研究》2001年第4期48-51,共4页Study on Optical Communications

摘　　要：讨论了影响激光器高温特性的主要因素 ,提出了在 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器中采用倒台脊波导 ( RM- RWG)结构可以改善激光器高温无致冷的工作特性 ,研制出了 RM- RWG结构的 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器 ,其阈值电流为 6m A,特征温度达到 95 K( 2 5℃～ 85℃ ) 。In this paper, the high temperature properties of 1.3 μm laser diode are discussed. The reverse mesa RWG structure is introduced into 1.3 μm AlGaInAs/InP MQW LD and applied to fabricate the uncooled laser diode with high performance and improved temperature characteristics. The threshold current as low as 6 mA, and characteristics temperature as high as 95 K between 25 ℃ and 85 ℃ are obtained, which are the best results in the literatures until now.

关 键 词：半导体激光器 ALGAINAS 量子阱激光器 高温无致冷 

分 类 号：TN248.4[电子电信—物理电子学]