用于改善PtSi红外焦平面阵列器件响应特性的长焦距GaAs微透镜阵列器件的制作研究(英文)  

FABRICATION OF GaAs MICROLENSES ARRAY WITH LONG FOCAL LENGTH FOR IMPROVING RESPONSIVITY OF PtSi IRFPA DEVICE

作　　者：何苗[1] 易新建[1] 程祖海[1] 刘鲁勤[2] 王英瑞[2] 

机构地区：[1]华中科技大学激光技术国家重点实验室,湖北武汉430074 [2]中国航天总公司二院25所,北京100854

出　　处：《红外与毫米波学报》2001年第5期321-324,共4页Journal of Infrared and Millimeter Waves

基　　金：国防科技重点实验室基金 (编号 99JS11.2 .0 JW0 5 0 5 )资助项目;国家自然科学基金 (编号 60 0 860 0 3)~~

摘　　要：提出了一种新的曲率补偿法用于长焦距微透镜阵列的制作。扫描电子显微镜 ( SEM)显示微透镜阵列为表面极为平缓的方底拱形阵列 ,表面探针测试结果显示用曲率补偿法制作的微透镜的焦距可达到 3 861.70 μm,而常规光刻热熔法很难制作出焦距超过 2 0 0μm的相同尺寸的微透镜阵列。微透镜阵列器件与红外焦平面阵列器件在红外显微镜下对准胶合 。Refractive square-based arch GaAs microlenses array was fabricated by a novel method, i.e., the curvature compensation method. The new method was proposed to increase the focal length of refractive microlenses array. Scanning electron microscopes (SEM) show that microlenses are square-based arch arrays, and surface, stylus measurement shows that the focal length of the microlenses array is 3861. 70 mum,which is much longer than 200 mum and it is the longest focal length of the microlenses array of the same size fabricated by conventional methods including photolithography, melting and ion beam milling. The microlenses array (MLA) device and infrared focal plane array (IRFPA) device were aligned under an IR microscope and coupled with a kind of infrared glue. The IR response characteristics of the hybrid device were improved greatly.

关 键 词：GAAS 离子束刻蚀 组合器件 红外焦平面阵列器件 响应特性 砷化镓 微透镜阵列器件 曲率补偿 焦距 

分 类 号：TN215[电子电信—物理电子学] TH742[机械工程—光学工程]