Ag、Ta元素对MoS_2抗氧化性影响的研究  

Influence of Ag and Ta Elements on the Oxidation Resistance of MoS_2 Films

作　　者：刘仲阳[1] 王培录[1] 廖小东[1] 郑思孝[1] 孙官清[1] 

机构地区：[1]四川大学原子核科学技术研究所

出　　处：《机械工程材料》2001年第9期10-12,共3页Materials For Mechanical Engineering

基　　金：核工业科学基金 (HJ96 0 1)

摘　　要：用离子束辅助沉积方法 (IBAD)制备MoS2 Ag和MoS2 Ta复合膜以及MoS2 膜。用XPS分别检测在相对湿度 10 0 %室温环境下存放 4 5天和室温去离子水浸泡 15 8h以及在 4 30℃加热 1h后的三种膜中Mo、S元素的电子结构。数据表明 :掺有Ag、Ta元素的MoS2 复合膜抗氧化特性远优于同种工艺条件下制备的纯MoS2 膜。MoS 2 Ag, MoS 2 Ta composite films and MoS 2 films were prepared by ion beam assisted deposition (IBAD). The electron structure of elements Mo and S were examined by XPS for the three samples which were stored for forty five days in 100% relative humidity, immersed for 158h in deionzed water or heated for 1 hour at 430℃ respectively. The oxidation resistance of MoS 2 Ag, MoS 2 Ta composite films much superior to that of the pure MoS 2 films deposited under the same condition was observed in the three environments.

关 键 词：离子束辅助沉积 复合膜 氧化 二硫化钼 银 钽 固体润滑剂 

分 类 号：TG174.444[金属学及工艺—金属表面处理] TH117.22[金属学及工艺—金属学]