增强腔在大失谐原子光刻中的应用  

Application of Enhanced Cavity in Far Detuning Atom-lithography

作　　者：曾庆林[1] 蔡惟泉[1] 霍芸生[1] 王育竹[1] 

机构地区：[1]中国科学院上海光机所量子光学开放实验室,上海201800

出　　处：《中国激光》2001年第9期783-785,共3页Chinese Journal of Lasers

基　　金：国家自然科学基金 (批准号 :696780 09;19774 0 60 );上海市科学技术发展基金 (批准号:97JC14 0 0 2 )资助课题

摘　　要：对增强腔在大失谐光场原子光刻中的实现进行了详细的讨论 ,通过增强腔对激光光束的压缩和功率的增强可达到近共振原子光刻的要求。数值结果显示相对于近共振原子刻印结果 ,在增强腔下光束中心处沉积的原子条纹宽度将更细 ,为原子刻印提供了一种实现条纹精细度较高的新型方案。An application of the enhanced cavity in far detuning atom-lithography has been discussed. By reducing the Guassian beam waist and increasing laser power in the cavity, the requirement for the near resonant atom-lithography can be met. The numerical result shows that the FMHW of the lines deposited on the substrate at the centre of the laser beam in far detuning atom-lithography is much less than that in near resonant atom-lithography under the same angle deviation. So the enhanced cavity provides an approach to the atom-lithography.

关 键 词：大失谐光场 原子光刻 增强腔 

分 类 号：O431.2[机械工程—光学工程]