功率GaAs-HBT热分布的解析模型  

An analytical model of the thermal distribution for GaAs power HBTs

作　　者：王源[1] 张义门[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《西安电子科技大学学报》2001年第5期625-629,共5页Journal of Xidian University

基　　金：国家部委预研基金资助项目 ( 98J8 1 2DZ0 12 2 )

摘　　要：通过解析求解热传导方程并耦合PN结直流特性方程 ,建立了多指AlGaAs/GaAsHBT的热电耦合解析模型 ,给出了相应的算法 ,得到异质结双极型晶体管的电流分布和温度分布 ,讨论了发射极镇流电阻、发射极条长、条宽、衬底厚度和指间间距对电流分布和温度分布的影响 .A thermal electric coupled model and its algorithm for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are presented. In this model, both the temperature and the current distribution among the fingers for a multi finger HBTs are obtained by solving the thermal current equation under the steady state coupled with the DC characterization equation of the GaAs PN junction. A computer program is developed to simulate the distributions of the temperature and current. The effects of different ballast resistance, emitter length, emitter width, substrate thickness and spaces between the fingers are discussed.

关 键 词：热电耦合解析模型 异质结双极型晶体管 砷化镓 

分 类 号：TN322.8[电子电信—物理电子学]