掺氮类金刚石薄膜激光退火的Raman光谱分析(英文)  

Raman analysis of laser annealed nitrogen doped amorphous carbon film

作　　者：居建华[1] 夏义本[1] 张伟丽[1] 王林军[1] 史伟民[1] 黄志明[2] 李志锋[2] 郑国珍[2] 汤定元[2] 

机构地区：[1]上海大学材料科学与工程学院,上海201800 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《功能材料与器件学报》2001年第3期258-262,共5页Journal of Functional Materials and Devices

摘　　要：采用显微拉曼光谱研究了掺氮的类金刚石薄膜 ,该薄膜分别经过能量密度为 300, 750和 1500 W/mm2氩离子激光的退火处理。分析结果表明氮原子在类金刚石薄膜中形成了 C－ N键制 约了 C－ H键的形成。由于 C－ N键的键能比 C－ H键的键能大得多，因此在激光退火过程中 C－ N 键不易分解。所以随着氮含量的增加，类金刚石薄膜的激光退火后石墨化程度明显降低，具有比较 好的热稳定性。而非掺氮的类金刚石薄膜由于 C－ H键含量比较高，因此激光退火后容易石墨化。A Micro－ Raman spectrometer was used to study nitrogen doped amorphous hydrogenated carbon a－ C:H(N) films, annealed by a focused argon ion laser (514.5 nm) operating at power density of 300, 750 and 1500 W/mm2, respectively. During laser annealing, with the increasing of the power density, the peak ratio ID/IG of Raman spectra of an a－ C:H film without nitrogen in－ creases and the peak of graphite shifts from 1550 to 1598 cm－ 1, indicating that the film has graphi－ tized. However, with the increasing nitrogen content in a－ C:H(N) films, the graphitization is clearly restrained, indicating that the a－ C:H(N) films have higher thermal stability than that of a－ C:H films. A laser cold annealing (LCA) mechanism based on the bond excitation energy and thermody－ namics is adopted to interpret the results satisfactorily.

关 键 词：类金刚石薄膜 激光退火 拉曼光谱 热稳定性 

分 类 号：TN304.18[电子电信—物理电子学] TG174.444[金属学及工艺—金属表面处理]