等离子体辅助MOCVD生长的ZnO薄膜退火改性研究  

The studies of the annealed ZnO films grown by plasma-assisted MOCVD

作　　者：王金忠[1] 王新强[1] 王剑刚[1] 姜秀英[1] 杨树人[1] 杜国同[1] 高鼎三[1] LIU Xiang CAO Hui XU Junying CHANG R P H 

机构地区：[1]吉林大学电子工程系光电子联合重点实验室,吉林长春130023 [2]MaterialResearchCenter

出　　处：《功能材料》2001年第5期502-503,共2页Journal of Functional Materials

基　　金：国家自然科学基金 (698962 60 );吉林省科学基金 (5991 0 1 61 983)资助项目

摘　　要：用等离子体辅助MOCVD法在蓝宝石 (α Al2 O3)上生长了ZnO薄膜 ,测试了其退火和未退火薄膜的电阻率、电子浓度、迁移率、激光阈值 ,并通过X光衍射、光致发光方法表征了ZnO薄膜的质量 ,其结果是 :退火薄膜的电子浓度低达 10 15/cm3 量级、激光阈值降低近 30倍、X光衍射峰半高宽是 0 .2 9°、在 388nm附近的光致发光谱峰半高宽为 0 .32nm。The ZnO thin films have been grown on the (0001) surface of sapphire by the method of plasma assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold are investigated. At the same time, the quality of the ZnO thin film is characterized by XRD and photo luminescence spectrum before and after annealed. The results are followed: the concentration of electron is 10 -5 /cm 3 grade, the optical lasing threshold is 0.0058μJ, the full width at half height of XRD is 0.29°, the full width at half height of PL is 0.32nm. It indicates the ZnO thin film quality is very high.

关 键 词：等离子体辅助MOCVD X光衍射 光致发光 激光阈值 氧化锌薄膜 退火 

分 类 号：TN304.21[电子电信—物理电子学]