退火温度对纳米PtSi/Si异质结形成的影响  

Effect of annealing temperature on the formation of nanometer PtSi/Si heterostructure and the surface morphologies of PtSi films

作　　者：殷景华[1] 蔡伟[1] 王培林[1] 郑玉峰[1] 王中[1] 李美成[1] 赵连城[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院

出　　处：《功能材料》2001年第5期504-505,共2页Journal of Functional Materials

摘　　要：采用XPS、XRD、AFM测试技术 ,研究退火温度对PtSi/Si异质结薄膜硅化物形成、分布及硅化物薄膜表面形貌的影响。测试结果表明 ,低温退火 ,薄膜中相分布顺序为Pt→Pt2 Si→PtSi→Si;高温退火 ,相分布顺序为Pt→Pt2 Si +PtSi→PtSi→Si或Pt +Pt2 Si+PtSi→PtSi→Si。退火温度高 ,薄膜中晶粒尺寸大 。The effect of annealing temperature on the formation and distribution of silicides phase,and the surface morphologies of silicides films is investigated by XPS,XRD and AFM techniques. It is shown that the phase sequences of the films is Pt→Pt 2Si→PtSi→Si at lower annealing temperature,or Pt→Pt 2Si+PtSi→PtSi→Si or Pt+Pt 2Si+PtSi→PtSi→Si at higher annealing temperature. With the annealing temperature increasing,the grain sizes become bigger and the surface of the films becomes coarser.

关 键 词：退火温度 PtSi/Si异质结 硅化物 薄膜 表面形貌 红外探测器 

分 类 号：TN213[电子电信—物理电子学]