利用X射线光电子谱对PtSi/p-Si(111)的电子结构研究  

XPS Study on Electronic Structure for PtSi/p-Si(111)

作　　者：李雪[1] 殷景华[1] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2001年第5期108-111,共4页Journal of Harbin University of Science and Technology

摘　　要：利用磁控溅射方法制备了不同工艺条件下的 ＰｔＳｉ／ ｐ-Ｓｉ异质薄膜，采用Ｘ射线光电子讲（ＸＰＳ）测试其芯能级和价电子能谱．结果表明，其相形成由表面到界面为Ｐｔ，Ｐｔ＿２Ｓｉ，ＰｔＳｉ，材底温度的升高与沉积薄Ｐｔ膜有利于单一ＰｔＳｉ的形成，并揭示其价电子谱中谱峰出现的原因．Formation of PtSi is prepared by sputter -deposited on Si(1 11) substrate after an- nealed at 500 ℃ for 30min. The core levels and valence band spectra of suicide are recorded by XPS. It has been proved that the distribution ofphase is Pt, Pt_2Si, PtSi from surface to interface respectively. Higher substrate temperature and thinner deposited film contribute to the formation of single PtSi on the other hand, peaks of valence band spectra are also investigated in detail.

关 键 词：X射线光电子谱 电子结构 介电子谱 PTSI/P-SI 硅化铂 光电子学 硅基光电材料 过渡金属硅化物 硅 薄膜 

分 类 号：TN201[电子电信—物理电子学] O484.1[理学—固体物理]