功率MOS、IGBT单粒子烧毁、栅穿效应模拟实验研究  

Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

作　　者：唐本奇[1] 王燕萍[1] 耿斌[1] 

机构地区：[1]西北核技术研究所,西安69信箱陕西西安710024

出　　处：《核电子学与探测技术》2001年第5期344-347,共4页Nuclear Electronics & Detection Technology

基　　金：;国防预研基金项目

摘　　要：建立了利用2 52 Cf裂片源 ,模拟空间重离子引起的单粒子烧毁、栅穿效应的实验方法和测试装置 ,开展了功率 MOS器件、IGBT的单粒子烧毁、栅穿效应的模拟试验研究 ,给出了被试器件单粒子烧毁、栅穿效应的损伤阈值 。An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source, presented were, the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors.

关 键 词：航天器 卫星 电子系统 抗辐射 加固 功率MOS器件 IBGT 单粒子烧毁 单粒子栅穿 模拟试验 辐射损伤 

分 类 号：V423[航空宇航科学与技术—飞行器设计] TN386.1[电子电信—物理电子学]