准分子激光诱导结晶硅膜的Raman光谱分析  

Raman Spectroscopy Analysis of Excimer Laser Crystallized Amorphous Silicon Films

作　　者：戴永兵[1] 沈荷生[1] 张志明[1] 张少强[2] 徐重阳[2] 李兴教[2] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《上海交通大学学报》2001年第6期947-950,共4页Journal of Shanghai Jiaotong University

摘　　要：采用 Xe Cl准分子激光器对 PECVD法生长的非晶硅膜进行了诱导晶化处理 .对结晶膜的晶体质量进行了 Raman光谱表征 .研究表明 ,对于非扫描模式 ,晶化前去氢处理可使结晶膜具有更高的结晶度 ,即氢的存在阻碍非晶硅的晶化 .玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响 .在 1 50～ 450 m J/cm2 ,结晶膜的结晶度随能量密度的增大而提高 .Amorphous silicon films prepared by PECVD method were crystallized by using an XeCl excimer laser. The crystalline quality of the crystallized films was characterized by Raman spectroscopy. It is shown that, for non-scanning mode, the dehydrogenation treatment before crystallization can make the crystallized film have higher crystallinity, that is, the role of hydrogen is to hinder the crystallization of amorphous silicon film. The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization. In the energy density of 150-450 mJ/cm2, the crystallinity of the crystallized films increases with the increase of energy density. The tensile stress introduced by the melting and the recrystallization of amorphous silicon films was confirmed to exist in the crystallized films.

关 键 词：准分子激光 非晶硅膜 RAMAN光谱 诱导晶化处理 结晶膜 结晶度 

分 类 号：O484.41[理学—固体物理] TN304.055[理学—物理]