含多层InAs量子点的双肖特基势垒二极管输运特性研究  

CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER

作　　者：李宏伟[1] 王太宏[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理学报》2001年第12期2506-2510,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :6992 5 410和 1990 40 15 )资助的课题~~

摘　　要：研究了含多层InAs量子点结构的双肖特基势垒的电流输运特性 ,观察到了量子点的电子存储效应及其对电流的调制现象、电流多稳态现象和零点电压漂移现象 .因为多量子点之间存在耦合作用 ,造成器件中的很多亚稳态 .通过器件的输运特性显示出比含单层量子点器件更复杂的结果 .随着外加电压的变化 ,器件经历很多弛豫过程 .这些弛豫过程在电流We have investigated the transport properties of a metal-semiconductor-metal structure containing multi-layers of InAs quantum dots from 77 K to room temperature. Three distinct phenomena are observed in the current-voltage( I-V) curves: the hysteresis loops, current jumps and voltage offsets. Because of the coupling between the multi-layered quantum dots, the devices made of these quantum dots exhibit much more complicated phenomenon than the devices containing single-layer quantum dots. The devices may undergo many metastable states and relaxation processes. These processes would induce current jump structures and noise in the I-V curve.

关 键 词：多量子点 迟滞现象 单电子过程 INAS 砷化铟 双肖特基势垒二极管 输运特性 

分 类 号：TN31[电子电信—物理电子学]