宽温区MOSFET反型层载流子迁移率的模型和测定方法  

The Model and Measurement Method of Inversion Layer Carrier Mobility of MOSFET in the Wide Temperature Range

作　　者：冯耀兰[1] 宋安飞[1] 张海鹏[1] 樊路加[1] 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《固体电子学研究与进展》2001年第4期448-452,共5页Research & Progress of SSE

基　　金：国家自然科学基金重点项目 (批准号 :6 9736 0 2 0 )

摘　　要：首先介绍了宽温区 (2 7～ 30 0°C) MOSFET的阈值电压、泄漏电流和漏源电流的特点以及载流子迁移率的高温模型 ;进而给出了室温下 MOSFET反型层载流子迁移率的测定方法 ,最后提出了利用线性区 I- V特性方程测定宽温区 MOSFET反型层载流子迁移率的方法 。In this paper, the characteristics of MOSFET threshold voltage、leakage current and drain source current in the wide temperature range from 27°C to 300°C are studied, afterwards the high temperature model of carrier mobility is studied too. The method of measuring the inversion layer carrier mobility of MOSFET at room temperature is given. Then the method of measuring the inversion layer carrier mobility in the wide temperature range, utilizing the I V characteristic equation in range of linearity, is explored and the measuring result is provided.

关 键 词：宽温区 金属-氧化物-半导体场效应晶体管 载流子迁移率 

分 类 号：TN386[电子电信—物理电子学]