流延硅基PZT厚膜工艺研究  

Fabrication of Silicon Based PZT Thick Film by Tape-casting Technology

作　　者：林州 赵宏锦[1] 任天令[1] 刘理天[1] 左如忠[2] 李龙土[2] 

机构地区：[1]清华大学微电子研究所,北京100084 [2]清华大学材料系,北京100084

出　　处：《压电与声光》2001年第6期449-452,共4页Piezoelectrics & Acoustooptics

基　　金："九七三"国家重大基金研究项目 (19990 3 3 10 5 )

摘　　要：研究了基于流延技术制备硅基锆钛酸铅 (PZT)厚膜的工艺。考虑衬底特性对厚膜品质的影响 ,在不同的种子层上分别制备了 PZT厚膜 ,测试工艺结果 ,证实了种子层的作用。分析了高温烧结时间对流延 PZT厚膜品质的影响 ,确定了最优高温烧结时间。文章提出的硅基A silicon based lead zirconate titanate (PZT) thick film technology by tape casting is studied in this paper.PZT thick films are fabricated upon different seed layers considering the influence of the substrate characteristic to the thick film quality.The technology result is tested to confirm the function of the seed layer.The influence of the sintering time to the tape casting PZT thick film quality is analyzed and the optimum sintering time is concluded.The silicon based PZT thick film technology in this paper can be used to fabricate the substrate of the radio frequency antenna.

关 键 词：流延 锆钛酸铅 厚膜 铁电材料 硅基 

分 类 号：TN304.9[电子电信—物理电子学]