薄栅介质TDDB效应  

TDDB Effect for Thin Gate Dielectric

作　　者：刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2001年第12期1592-1595,共4页半导体学报（英文版）

基　　金：国防预研基金资助项目 (No.OOJ8.4.3 DZ0 1)~~

摘　　要：在恒压和恒流应力条件下测试了超薄栅氧化层的击穿特性 ,研究了 TDDB(Tim e Dependent DielectricBreakdown)的可靠性表征方法 .对相关击穿电荷量 QBD进行了实验测试和分析 .结果表明 :相关击穿电荷量 QBD除了与氧化层质量有关外 ,还与应力电压和应力电流密度以及栅氧化层面积有关 .对相关系数进行了拟合 ,给出了 QBD的解析表达式 .按照上述表达式外推的结果和实验值取得了很好的一致 .提出了薄栅介质The breakdown characteristics of ultra thin gate oxide are measured under the constant voltage and constant current stresses.The reliability characterization methods of TDDB are investigated.The measured results show that charge to breakdown Q BD depends on not only the quality of the gate oxides but also the stressed voltage,current density and area of gate oxide.An analytical expression of Q BD is deduced after extracting the fitted relative coefficients.The extrapolating results according to the described above relation are in good agreement with the experiment value.A new characterization method of thin gate dielectric TDDB is presented.

关 键 词：TDDB效应 薄栅介质 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学]