CVD条件对金刚石薄膜/钼基体界面层的影响  

Effects of chemical vapor deposition conditions on the interfacial layer of diamond film on molybdenum substrate

作　　者：马志斌[1] 汪建华[1] 邬钦崇[2] 

机构地区：[1]武汉化工学院材料科学与工程系,湖北武汉430073 [2]中国科学院等离子体物理研究所,安徽合肥230031

出　　处：《武汉化工学院学报》2001年第3期39-42,共4页Journal of Wuhan Institute of Chemical Technology

基　　金：国家 8 63计划资助项目 ( 863 71 5 0 0 2 0 0 2 0 )

摘　　要：用微波等离子体化学气相沉积法 ( MPCVD)在 Mo基片上沉积金刚石薄膜时 ,界面层钼的碳化程度与初始沉积条件有关 .利用 XRD,SEM,EDS对界面层进行的研究表明 :在化学气相沉积的开始阶段 ,较低的甲烷浓度有利于碳向基体内的扩散从而让表面的 Mo充分碳化 ,形成富含 Mo2 C的界面层 .甲烷浓度过高时有利于金刚石的形核而不利于碳向基体内的扩散。在金刚石薄膜的生长过程中 ,碳向基体内的扩散很少 。The formation and structure of the carbide layer were determined by the initial deposition conditions when a diamond film was deposited on molybdenum substrate by microwave plasma chemical vapor deposition method. The interfacial layer was studied by XRD, SEM and EDS. The results show that lower methane concentration at the initial process during CVD process is beneficial to the diffusion of carbon into molybdenum and the formation of carbide, while higher methane concentration is useful for the nucleation and harmful for the diffusion of carbon into molybdenum. After the diamond nucleation, the carbide layer does not change with the growth of the diamond film.

关 键 词：化学气相沉积 界面层 碳化物 CVD条件 金刚石薄膜 钼基体 

分 类 号：O484.3[理学—固体物理]