MOS电离辐照感生Si-SiO_2界面态及其密度的能级分布  

y-ray irradiation-induced Si-SiO_2 interfacial state and its energy level distribution of its density in MOS structure

作　　者：吾勤之[1] 刘昶时[1] 张玲珊[1] 寒梅[1] 王方[2] 柳博[2] 赵元富[2] 

机构地区：[1]中国科学院新疆物理研究所 [2]航天部七七一研究所

出　　处：《核技术》1989年第4期201-204,共4页Nuclear Techniques

基　　金：中国科学院青年奖励基金

摘　　要：本文主要讨论n(100)硅栅MOS样品在^(60)Coγ射线辐照下,氧化层电荷ΔD_(ot)、Si-SiO_2界面态密度ΔD_(tt)和界面态密度的能级分布。实验证明,辐照效应与偏置电场密切相关,在+1MV/cm偏置电场辐照时,出现氧化层电荷和界面态密度峰值,禁带中央态密度正比于被俘获空穴的密度,硅栅样品的界面态密度在禁带中服从U型分布,而铝栅n衬MOS样品辐照后出现具有确定能级(E_c—E_s=0.41—0.5eV)的界面态密度分布宽峰。The oxide trapped charge ΔDof, the Si-SiO2 interfacial state density ΔDif and the energy level distribution of the density introduced in polysilicon gate MOS samples with n(100) silicon substrate after 60Co γ-ray irradiation are studied. Experimental evidence indicates that the effect of irradiation strongly depends on the bias field. When samples are irradiated at a + 1MV/cm bias field, both the oxide trapped charge and the interfacial state density present a peak. The midgap state density is proportional to the density of holes trapped. While the interfacial state density of polysilicon gate MOS samples in the forbidden band obeys the U-type distribution, a broad peak of interfacial state density with definite energy level (Ec-E3 = 0.41?.5eV) appears in the Al-gate n substrate MOS samples after irradiation.

关 键 词：氧化层 电荷 界面态 密度 辐照偏置 

分 类 号：O483[理学—固体物理]