等离子体渗氮与氮化钛膜沉积一体化工艺对膜基结合力的影响  

Effect on substrate-film adherence of TiN film enhanced plasma nitriding

作　　者：肖志刚[1] 林东生[1] 张宏 关颖[1] 叶锡生[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《强激光与粒子束》2002年第1期77-80,共4页High Power Laser and Particle Beams

基　　金：西北核技术研究所高新技术资助课题

摘　　要：在一种增强型多弧镀膜装置上 ,实现了低温等离子体渗氮同氮化钛硬质膜沉积联合处理工艺。通过扫描电镜对膜层结构的分析 ,氮化钛硬质膜与基体之间具有相适应的力学性能 ,并在膜基界面处形成氮化物的混合层。通过对膜基结合力的定量测试 。The combined process of low temperature plasma nitriding and TiN film deposition was realized on the plasma-assisted vacuum arc plating set. The process of plasma nitriding can be done below 200℃. The low temperature plasma nitriding and TiN film deposition was realized on the same device. By the SEM analysis of the plating structure, low hardness grads from the substrate to the film was obtained, and it was found that the mixed nitride plating formed at the interface between the substrate and the film. The quantitative measurement of substrate-film adherence showed that the adherence was improved notably by using the process. The adherence between film and substrate can reach to 59.6MPa without the bias voltage supplying.

关 键 词：等离子体发生器 氮化钛膜 膜基结合力 材料表面处理 硬质膜 等离子体渗氮 工艺 

分 类 号：TB43[一般工业技术] TB30