MILC超薄沟道多晶硅薄膜晶体管  

MILC Thin Film Transistor with Ultra-Thin Channel

作　　者：金仲和[1] 王跃林[1] 

机构地区：[1]浙江大学信息与电子工程学系,浙江杭州市玉泉310027

出　　处：《电子学报》2001年第8期1068-1071,共4页Acta Electronica Sinica

摘　　要：金属诱导横向结晶技术制备的多晶硅薄膜具有晶粒尺寸大且不随薄膜厚度而减小的特点 ,本文根据这一特点提出利用超薄沟道结构提高薄膜晶体管性能 .采用超薄结构后 ,成功地将金属诱导结晶薄膜晶体管的漏电降到10 -13 A/ μm以下 ;开关比提高了近 10 0倍达到 3× 10 7以上 ;场效应迁移率从普通结构晶体管的 80cm2 /Vs(NMOS)与5 1cm2 /Vs(PMOS)分别提高到 110cm2 /Vs与 6 8cm2 /Vs;阈值及亚阈摆幅也有很大改善 .文中还将金属诱导结晶与传统固相结晶所得薄膜晶体管的性能进行了比较 。Thin film transistors with different channel thickness were fabricated with metal induced lateral crystallization (MILC) and conventional solid-phase crystallization (SPC). The performance of MILC devices is much better than that of SPC devices, and the performance of the MILC devices can be further improved by reducing the thickness of the channel layer. Leakage current less than 10-13 A/μm and on/off ratio above 3×107 are obtained for MILC device with ultra-thin channel layer. Field effect mobility is improved from 80 cm2/Vs for NMOS or 51 cm2/Vs for PMOS to 110 cm2/Vs by using ultrathin channel layer. Possible reasons are proposed and discussed.

关 键 词：金属诱导结晶 多晶硅 薄膜晶体管 MILC 

分 类 号：TN325.2[电子电信—物理电子学]