(Si,Er)双注入热氧化SiO_2/Si薄膜的表面结构及1.54μm光发射  

Surface Structure and 1.54μm Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO_2/Si Thin Film

作　　者：徐飞[1] 肖志松[2] 程国安[3] 易仲珍[2] 曾宇昕[3] 张通和[2] 顾岚岚[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433 [2]北京师范大学射线束技术与材料改性教育部重点实验室 [3]南昌大学材料科学与工程系,南昌330047

出　　处：《Journal of Semiconductors》2001年第10期1258-1263,共6页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :6 976 6 0 0 1);复旦大学应用表面物理国家重点实验室基金资助项目~~

摘　　要：利用金属蒸气真空弧 (MEVVA)离子源将 Si和 Er离子双注入到不同厚度热氧化 Si O2 / Si薄膜中获得 Er掺杂硅基发光薄膜 .掺杂到热氧化 Si O2 / Si薄膜表面的 Er原子浓度可达到～ 10 % ,即体浓度～ 10 2 1 cm- 3 .热氧化 Si O2膜越厚 ,溅射后 Si O2 保留量越多 ;再结晶硅颗粒结晶程度提高 ,逐渐纳米化 ;未见有大量的 Er偏析或铒硅化物形成 ,Er大部分以固溶形式存在 .在 77K下获得了较强 1.5 4μm光致发光信号 。Si plus Er dual implanted thermal SiO 2 thin films on Si wafer are synthesized by using Metal Vapor Vacuum Arc (MEVVA) ion implanter.Er concentration in the surface of these samples is attained to be ～10%,which corresponds to the level of ～10 21 cm -3 and is much higher than that in the samples fabricated by using methods,such as high energy ion implantation and molecular beam epitaxy,etc.The remains of SiO 2 thin film increases with the thickness of thermal film increasing.The RHEED and AFM results show that Si is gradually nano crystallized in the course of recrystallization;while few Er segregation or precipitation are found to be formed during the rapid thermal annealing.1 54μm light emitting signals in these samples are obtained at 77K and room temperature (RT),respectively.The 1 54μm signals at RT do not decrease obviously.

关 键 词：双注入 掺铒硅 光致发光 表面结构 二氧化硅 薄膜 

分 类 号：TN304.91[电子电信—物理电子学]