重掺硅中氧的测定  

Determination of Oxygen in Heavily Doped CZ-Silicon

作　　者：刘培东 黄笑容[1] 沈益军[1] 李立本[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料科学国家重点实验室

出　　处：《Journal of Semiconductors》2001年第10期1284-1286,共3页半导体学报（英文版）

摘　　要：研究了重掺硅中氧的测定 ,实验首先选用轻掺 (ρ>10Ω· cm)样品分别用气体熔化分析法 (GFA法 )和傅里叶变换红外法 (FTIR法 )测氧 ,而后用 GFA法测定了重掺锑、砷、硼单晶的氧浓度 .实验发现用 GFA法和 FTIR法测氧 ,二者的结果成很好的线性关系 ,为便于比较可将重掺硅在 GFA法下的测定结果转换为 FTIR法下的测定结果 ,还对影响 GFA法测定结果的样品制取、样品处理。A method for the determination of oxygen in doped silicon (arsenic?stibium or boron) by Gas Fusion Analysis (GFA) is described.With Fourier Transform Infrared spectroscopy (FTIR),the oxygen content in a set of undoped silicon wafers is determined first,then it is used as the standards of the GFA calibration.The results obtained from GFA and FTIR are in good agreement with each other.Thus, for the sake of convenience,the oxygen determination results from GFA can be transformed into that from FTIR.The sample prepration,analysis constants are also proposed.

关 键 词：硅中氧 气体熔化分析法 红外光谱 

分 类 号：TN307[电子电信—物理电子学]