深亚微米槽栅PMOSFET结构参数对其抗热载流子效应和短沟道抑制作用的影响  

Influence of Structure Parameters on the Hot-Carrier-Effect Immunity and Short-Channel-Effect Suppression in Deep-Sub-Micron Grooved Gate PMOSFET

作　　者：任红霞[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2001年第10期1298-1305,共8页半导体学报（英文版）

基　　金：国防预研基金( 99J8.1.1.DZD132 );高等院校博士点基金 ( 80 70 110 )资助项目~~

摘　　要：基于流体动力学能量输运模型 ,利用二维仿真软件 Medici对深亚微米槽栅 PMOS器件的结构参数 ,如凹槽拐角、负结深、沟道和衬底掺杂浓度对器件抗热载流子特性和短沟道效应抑制作用的影响进行了研究 .并从器件内部物理机理上对研究结果进行了解释 .研究发现 ,随着凹槽拐角、负结深的增大和沟道杂质浓度的提高 ,器件的抗热载流子能力增强 ,阈值电压升高 ,对短沟道效应的抑制作用增强 .而随着衬底掺杂浓度的提高 ,虽然器件的短沟道抑制能力增强 。Based on the hydro dynamic energy transport model,the influences of structure parameters on the hot carrier effect immunity and the suppression of short channel effect in deep sub micron grooved gate PMOSFET are studied and explained in terms of the device interior physics mechanism.These investigated structure parameters include the concave corner,the negative junction depth and the doping density of channel and substrate.The research results indicate that with the increase of the concave corner,the negative junction depth and the doping density of channel,the hot carrier effect immunity is enhanced;the threshold voltage increases and the short channel effect is suppressed.But as the doping density of substrate rises,although the short channel effect is enhanced,the hot carrier effect immunity becomes weaker.

关 键 词：深亚微米 槽栅PMOSFET 热载流子效应 短沟道效应 结构参数 场效应晶体管 

分 类 号：TN386.5[电子电信—物理电子学]