倒扣芯片连接底充胶分层和焊点失效  

Underfill Delamination and Solder Joint Failure of Flip Chip on Board

作　　者：徐步陆[1] 张群[1] 彩霞[1] 黄卫东[1] 谢晓明[1] 程兆年[1] 

机构地区：[1]中国科学院上海冶金研究所中德电子封装联合实验室,上海200050

出　　处：《Journal of Semiconductors》2001年第10期1335-1342,共8页半导体学报（英文版）

基　　金：国家自然科学基金重点资助项目 (批准号 :198340 70 );海市科技发展基金资助项目 (编号 :99ZD14 0 5 5 )~~

摘　　要：在热循环疲劳加载条件下 ,使用 C- SAM高频超声显微镜测得了 B型和 D型两种倒扣芯片连接在焊点有无断裂时芯片 /底充胶界面的分层和扩展 ,得到分层裂缝扩展速率 .同时在有限元模拟中使用断裂力学方法计算得到不同情况下的裂缝顶端附近的能量释放率 .最后由实验裂缝扩展速率和有限元模拟给出的能量释放率得到可作为倒扣芯片连接可靠性设计依据的The delamination propagation behavior at the interface between the chip and the underfill is investigated and the crack propagation rates are measured via C SAM inspection for two types (B & D) of flip chip packages under thermal cycle loading.Meanwhile,in the related simulations of the element,the strain energy releasing rates near the crack tip under different conditions can be calculated by employing the fracture mechanical method.Then,the Paris half empirical equation,used as design criteria of flip chip package reliability,is determined with the crack propagation rates and the energy release rates obtained.

关 键 词：倒扣芯片 底充胶 有限元模拟 焊点失效 微电子 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]