SiC器件与电路的若干关键技术  

Key Techniques for Silicon Carbide Semiconductor Devices and Integrated Circuits

作　　者：詹永玲[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《微电子学》2001年第4期233-238,251,共7页Microelectronics

基　　金：国家自然科学基金 ( 697760 2 3 ) ;教育部"跨世纪优秀人才培养基金"资助项目 ;国防科技预研基金资助项目

摘　　要：Si C器件可以稳定工作于高温、高频、强辐射条件下的能力已经得到证实。在许多应用领域和系统中 ,Si C已经成为进一步提高性能的理想材料。但是 ,在 Si C器件及其电路的数量按比例增长并被融入电子系统之前 ,晶体生长和器件制造等技术必须得到进一步的发展。文章报道了 Si C技术的最新进展情况。It has been demonstrated that silicon carbide devices can operate stably in extreme high temperature, high power and high radiation environments.In many special applications and systems, SiC has become an ideal material for further improvement of the device performance.But, the technique for crystal growth and process technology for device fabrication have to be further developed before SiC based devices and circuits can be scaled up and incorporated into electronic systems.Latest progresses in silicon carbide technology have been reported in the paper.

关 键 词：碳化硅 化学气相淀积 半导体器件 集成电路 

分 类 号：TN303[电子电信—物理电子学] TN304.24