集成电路片内铜互连技术的发展  

State-of-the-Art of the On-Chip Copper Interconnect Technology for ULSI's

作　　者：陈智涛[1] 李瑞伟[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2001年第4期239-241,共3页Microelectronics

摘　　要：论述了铜互连取代铝互连的主要考虑 ,介绍了铜及其合金的淀积、铜图形化方法、以及铜与低介电常数材料的集成等。综述了 ULSI片内铜互连技术的发展现状。The reason for replacement of Al interconnect with its Cu counterpart is elaborated.The deposition of copper and its alloys, copper patterning, and the integration of low k material into Cu interconnect are described.The state of the art of the on chip Cu interconnect for ULSI's and its development are summarized in this paper.

关 键 词：集成电路 铜互连 铜淀积 铜图形化 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]