多孔硅外延层转移制备SOI材料的研究  

SOI material fabricated by using epi taxial layer transfer of porous silicon

作　　者：刘卫丽[1] 多新中[1] 张苗[1] 沈勤我[1] 王连卫[1] 林成鲁[1] 

机构地区：[1]中国科学院上海冶金所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2001年第4期355-359,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(69906005和9775062);上海市科学技术发展基金项目(98JC14004)

摘　　要：用多孔硅外延层转移的方法成功地制备出了SOI材料,卢瑟福背散射/沟道谱(RBS/C)和扩展电阻(SPR)的结果表明获得的SOI材料上层硅具有很好的单晶质量,电阻率分布均匀,上层硅与氧化硅埋层界面陡直。对制备多孔硅的衬底材料也作了研究,结果表明P型重掺杂的硅衬底在暗场下阳极氧化后仍保持很好的单晶性能,用超高真空电子束蒸发方法能外延出质量很好的单晶硅,并且,在一定浓度的HF/H2O2溶液中具有较高的腐蚀选择率,保证了上层硅厚度的均匀性。SOI material was successfully fabr icated by using epitaxial layer tran sfer of porous silicon.The result of Rutherford backscatte ring spectroscopy and channeling(RBS /C)shows that the crystal -line quality of top Si layer is good.S preading resistance probe technolo gy(SRP)indicates that the resistivity of top silicon layer is u niform and the interface between the top silicon layer and SiO 2 buried layer is very sharp.The effect of silicon type before anodizing on the sub sequent steps was also studied.Experimental results show that the p orous silicon made from P type Si main tains good crystalline quality.And epitaxial silicon layer with goo d crystalline quality grew on it by using ultra -vacuum electronic beam evaporation.Furthermore,com paring body silicon,the corrosion r ate in HF /H2O2solution with a certain concentration is very high,which ensures the thickness of top S i layer.

关 键 词：绝缘体上 多孔硅 外延 SOI材料 

分 类 号：TN304.12[电子电信—物理电子学]