淀积在硅片上起杂质吸除用的多晶硅的研究  

Study of polysilicon deposited on backside surface of silicon wafers for gettering

作　　者：闵靖[1] 邹子英[1] 李积和 陈青松 周子美 陈一[3] 

机构地区：[1]上海市计量测试技术研究院,上海200233 [2]上海硅材料厂,上海松江201617 [3]复旦大学材料研究所,上海200433

出　　处：《功能材料与器件学报》2001年第4期401-404,共4页Journal of Functional Materials and Devices

摘　　要：在器件的高温工艺过程中多晶硅再结晶,晶粒不断地长大,多晶硅层厚因高温氧化而减薄直到完全耗尽。在多晶硅层完全去除后在硅衬底中诱生出高密度的氧化层错起吸除中心作用。多晶硅能促进硅片内的氧沉淀成核和生长,起内吸杂作用。本文提出了多晶硅持续吸杂的机理。The Polysilicon recrystallizes an d its crystalline grain grows up during the high temperature process of devices.Polysilicon lay er is thinned down and removed thorou ghly by the high temperature oxidation.High density of stacking faults induced in the silicon substr ate act as gettering centers even after the polysilicon is removed.The polysilicon can enhance oxygen pre cipitation nucleating and grow -ing,acting as the intrinsic gettering.The mechanism of the duration of polysilicon gettering is proposed.

关 键 词：多晶硅吸杂 内吸杂 增强吸杂 氧沉淀 氧化层错 洁净层 

分 类 号：TN304.12[电子电信—物理电子学]