离子束增强沉积AlN薄膜的研究  

Formation of AlN Film by Ion-beam-enhanced Deposition

作　　者：门传玲[1] 徐政[1] 郑志宏[2] 多新中[2] 张苗 林成鲁[2] 

机构地区：[1]同济大学材料学院微电子所,上海200092 [2]中国科学院上海冶金所信息功能材料国家重点实验室,上海200050

出　　处：《压电与声光》2001年第5期366-369,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究专项基金资助项目( G2 0 0 0 0 36 5 );国家自然科学基金资助项目 ( 6 9976 0 34)

摘　　要：利用离子束增强沉积 (IBED)法成功地在 Si(10 0 )衬底上合成了大面积均匀的非晶 Al N薄膜。 XRD和XPS测试结果证实该薄膜为非晶且无单质 Al和 N2 存在 ,随着 Al蒸发速率的提高 ,N/Al下降 ,在 0 .0 5 nm /s及0 .10 nm/s的蒸发速率下制得的薄膜 N/Al分别为 0 .40 2∶ 1和 0 .2 5 0∶ 1。SRP测试结果表明 ,随着 Al蒸发速率的提高 ,表面电阻下降 ,并且在 0 .0 5 nm/s的速率下制得的薄膜均匀致密 ,表面电阻高于 10 8Ω,绝缘性能良好 ,而当蒸发速率≥ 0 .2 5 nm/s时 ,薄膜绝缘性能迅速下降。AFM分析显示薄膜呈岛状分布 ,且 0 .0 5 nm/s制取的样品表面呈鹅卵石密堆积 ,颗粒均匀 ,表面比 0 .10 nm/s样品起伏平缓、光滑 。AlN films have been synthesized on Si (100) substrate by ion beam enhanced deposition (IBED). XRD and XPS patterns indicate that AlN films are amorphous,no free Al and N 2 are detected With increasing rates of Al evaporation,the ratio of N to Al decreased When deposited at 0 05 nm/s and 0 1 nm/s evaporation rates of Al,the ratio of N to Al was 0 402∶1 and 0 250∶1,respectively SRP results suggest that the spreading resistance (SR) decreased with increasing rates of Al evaporation If the evaporation rate of Al is higher than 0 25 nm/s, the quality of AlN film will greatly deteriorate The SR value of the best quality film deposited at 0 05 nm/s rate of Al was bigger than 10 8 Ω AFM observation also exhibits that the surface of AlN film formed at 0 05 nm/s rate is smoother and more uniform than that of 0 10 nm/s implying the there dimensional island growth mechanism

关 键 词：离子束增强沉积 ALN 薄膜 

分 类 号：O484.1[理学—固体物理]