光伏法研究硅单晶表面态真空敏感机理  

Study on Vacuum Sensitive Mechanism of Surface States Silicon by Photovoltaic Method

作　　者：颜永美[1] 孙宜阳[1] 丁小勇[1] 周海文[1] 

机构地区：[1]厦门大学物理系,厦门361005

出　　处：《Journal of Semiconductors》2002年第1期21-25,共5页半导体学报（英文版）

摘　　要：根据光伏方法研究的半导体表面气体分子吸附机理 ,提出了硅单晶表面态真空敏感效应的机理模型 ,解释了表面态敏感型的真空传感器的各有关观测结果 .因此可以确认 ,硅单晶表面态对真空敏感的实质原因就是由于构成大气主要成份的氮气和氧气两种元素的电子亲和势相对于硅元素 ,具有明显不同的且符号相反的差值 ,导致吸附于硅表面的 N2 、O2A mechanism model of the sensitive effect of vacuum conditions on the surface states of silicon crystal is proposed,from study on the adsorption mechanism of gaseous molecules on the surface of semiconductor by photovoltaic method.Consequently the relative observed results from the vacuum sensors based on the surface state sensitivity are clearly explained.Thereby,it can be confirmed that the essential cause of the vacuum sensitive for the surface states of silicon is that the electron affinity potentials of nitrogen element and oxygen element,relative to of silicon element,have obviously different and sign opposite difference values.It can cause the charge transfers with different directions between N 2,O 2 molecules adsorbed on silicon surface and the surface states of silicon and their difference value varies with the change of vacuousness.

关 键 词：半导体表面态 真空敏感机理 光伏方法 硅单晶 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]