一种新的等离子体边缘损伤的测量方法  

A New Method of Measuring Plasma Edge Damage

作　　者：朱志炜[1] 郝跃[1] 张进城[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《Journal of Semiconductors》2001年第11期1474-1480,共7页半导体学报（英文版）

基　　金：国家"九五"国防预研基金资助项目 ( No.8.5 .3.4)~~

摘　　要：在等离子体刻蚀多晶硅工艺中 ,栅边缘氧化层直接暴露在等离子体环境中 ,由于 U V射线的作用栅边缘处将会产生损伤 ,这种损伤包含了大量的界面态和氧化层陷阱 .文中讨论了等离子体边缘损伤与圆片位置关系、天线比之间的关系及它们对器件长期可靠性的影响 ,并使用了低频局部电荷泵技术 .测量的结果包含了损伤产生的快、慢界面态和氧化层陷阱的信息 ,可以较好地测量工艺中产生的栅边缘损伤 ,为评估薄栅During the plasma etching of poly silicon,owing to the direct exposure of gate edge to plasma,the plasma edge da mages by UV ray will occur at the corner of the gate,including a large number of interface states and oxide traps.The interaction among edge damage,position dependent,antenna ratio and their impact on device reliability is discussed.An accurate charge pumping technique,namely low frequency local CP measurement,is used to characterize the resultant edge damage.The result of experiment covers the information on slow and fast interface states,oxide traps,so it can evaluate the edge damage produced in the process.A compact method is proposed for evaluating the gate edge damage of the thin gate MOSFET.

关 键 词：边缘损伤 天线比 电荷泵 等离子体 集成电路 刻蚀 多晶硅 

分 类 号：TN306[电子电信—物理电子学]