透射式GaAs光电阴极AlGaAs/GaAs外延层内应力的种类及其表征与测量  

THE VARIETIES,REPRESENTATION AND MEASURING ON THE STRESSES OF AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE

作　　者：李晓峰[1] 张景文[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所光电子学研究室,西安710068

出　　处：《光子学报》2002年第1期88-92,共5页Acta Photonica Sinica

摘　　要：本文介绍了透射式 Ga As光电阴极 Al Ga As窗层和 Ga As光电发射外延层内应力的种类及其表征方法和测量方法 。The stresses overall epitaxial wafer can be represented by the curvature radius of the wafer,furthermore the curvature radius of curved wafer can be measured by X-ray diffraction.This paper described the varieties,the presetation and measuring method of stresses on AlGaAs/GaAs epitaxial layer.Besides experimental data and analysing results were given in this paper .

关 键 词：GAAS/ALGAAS 光电阴极 X射线衍射 应力 外延 测量方法 表征方法 砷化镓 铝砷镓化合物 半导体 

分 类 号：TN304.2[电子电信—物理电子学] O462[理学—电子物理学]