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作 者:周勇[1] 禹金强[1] 赵小林[1] 杨春生[1]
机构地区:[1]上海交通大学信息存储研究中心国家教育部薄膜与微细技术重点实验室,上海200030
出 处:《真空科学与技术》2001年第5期360-363,367,共5页Vacuum Science and Technology
摘 要:用磁控溅射法在玻璃基片上制备了FeSiB/Cu/FeSiB多层膜 ,在 10 0kHz~ 40MHz范围内研究了FeSiB/Cu/FeSiB多层膜中的巨磁阻抗效应特性。当磁场强度Ha 施加在薄膜的长方向时 ,巨磁阻抗效应随磁场的增加而增加 ,在某一磁场下达到最大值 ,然后随磁场的增加而下降到负的巨磁阻抗效应。在频率为 3 2MHz时 ,在磁场强度Ha=2 40 0A/m时巨磁阻抗变化率达到最大值 13 5 0 % ;在磁场强度Ha=96 0 0A/m时 ,巨磁阻抗变化率为 - 9 2 0 %。巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关。另外 ,当磁场施加在薄膜的短方向时 ,薄膜表现出负的巨磁阻抗效应 ,在频率为 3 2MHz,磁场强度Ha=96 0 0A/m时 ,巨磁阻抗变化率可达 - 12 5 0 %Multilayered FeSiB/Cu/FeSiB films were prepared by magnetron sputtering on glass substrate. The giant magneto-impedance (GMI) effect was investigated in the frequency range from 100 kHz to 40 MHz. When the magnetic field Ha is applied along the longitudinal direction of the sample, the GMI ratio increases with the increase of Ha and reaches a maximum at a certain value of Ha, then decreases to the negative GMI ratio with further increase of Ha. At a frequency of 3.2 MHz, the maximum GMI ratio is 13.50% for Ha=2400 A/m, and a larger negative GMI ratio, -9.20% is obtained for Ha=9600 A/m. The large negative GMI ratio and the maximum GMI ratio are correlated to the easy axis orientation and the dispersion of the magnetic anisotropy in the multilayered FeSiB/Cu/FeSiB films. When Ha is applied along the transverse direction, the GMI ratio is negative and a negative GMI ratio of -12.50% is obtained at 3.2 MHz for Ha=9600 A/m.
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