氮化硼薄膜的场致发射特性  

Field Emission Characteristics of BN Thin Films

作　　者：顾广瑞[1] 何志[1] 李英爱[1] 王翠[2] 冯伟[1] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室 [2]青岛化工学院信控学院,山东青岛266042

出　　处：《液晶与显示》2002年第1期44-48,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助 ( 5 9831 0 4 0 )

摘　　要：研究了氮化硼 (BN)薄膜的场发射特性与不同基底偏压和不同膜厚的关系。在磁控溅射反应器中 ,使用高纯六角氮化硼 (h BN)靶 ,通入Ar和N2 的混合气体 ,制备出了纳米BN薄膜。溅射是在基底加热 470℃和总压力为 1 .2Pa的条件下进行的。在超高真空系统中测量了不同膜厚和不同基底偏压的BN薄膜的场发射特性 。The dependences of the field emission characteristics of BN thin films on the different substrates bias and the thickness of the films are presented. The BN films were deposited by reactive magnetron sputtering of a h-BN targets in an Ar+N 2 mixture in a conventional sputtering reactor. The sputtering was carried out at a substrate temperature of 470℃ and a total pressure of 1. 2 Pa. The field emission characteristics of thin BN films were measured in a super high vacuum system. It is found that the field emission characteristics of BN thin films depend greatly on the different substrates bias and the thickness of the films.

关 键 词：BN薄膜 场致发射 氮化硼薄膜 基板偏压 薄膜厚度 磁控溅射 

分 类 号：O484.4[理学—固体物理] O462.4[理学—物理]